Initial nucleation scheme of Ga2O3 on (0001) sapphire by mist CVD for the growth of α-phase (vol 60, 055501, 2021)

被引:0
|
作者
Takane, Hitoshi [1 ]
Kaneko, Kentaro [1 ,2 ,3 ]
Ota, Yuichi [4 ]
Fujita, Shizuo [1 ,3 ]
机构
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan
[2] Kyoto Univ, Engn Educ Res Ctr, Kyoto 6158530, Japan
[3] Kyoto Univ, Photon & Elect Sci & Engn Ctr, Kyoto 6158520, Japan
[4] Tokyo Metropolitan Ind Technol Res Inst, Tokyo 1350064, Japan
关键词
D O I
10.35848/1347-4065/ac8401
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页数:1
相关论文
共 50 条
  • [41] Strain relaxation in ε-Ga2O3 thin films grown on vicinal (0001) sapphire substrates
    Chen, Shujian
    Chen, Zimin
    Chen, Weiqu
    Fang, Paiwen
    Liang, Jun
    Wang, Xinzhong
    Wang, Gang
    Pei, Yanli
    JOURNAL OF ALLOYS AND COMPOUNDS, 2024, 989
  • [42] Epitaxial growth of γ-Ga2O3 films by mist chemical vapor deposition
    Oshima, Takayoshi
    Nakazono, Taishi
    Mukai, Akira
    Ohtomo, Akira
    JOURNAL OF CRYSTAL GROWTH, 2012, 359 : 60 - 63
  • [43] Nucleation Window of Ga2O3 and In2O3 for Molecular Beam Epitaxy on (0001) Al2O3
    Karg, Alexander
    Bich, Justin Andreas
    Messow, Adrian
    Schowalter, Marco
    Figge, Stephan
    Rosenauer, Andreas
    Vogt, Patrick
    Eickhoff, Martin
    CRYSTAL GROWTH & DESIGN, 2023, 23 (06) : 4435 - 4441
  • [44] Growth mechanism of α-Ga2O3 on a sapphire substrate by mist chemical vapor deposition using acetylacetonated gallium source solutions
    Uno, Kazuyuki
    Ohta, Marika
    Tanaka, Ichiro
    APPLIED PHYSICS LETTERS, 2020, 117 (05)
  • [45] Growth of ε-Ga2O3 film and fabrication of high quality β-Ga2O3 films by phase transition
    Lee, Hansol
    Kim, Soyoon
    Lee, Jungbok
    Ahn, Hyungsoo
    Kim, Kyounghwa
    Yang, Min
    JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY, 2021, 31 (01): : 1 - 7
  • [46] Heteroepitaxial growth and band alignment of ?-Ga2O3 on GaN substrate grown by non-vacuum mist-CVD
    Yan, Pengru
    Zhang, Zeyulin
    Xu, Yu
    Chen, Hao
    Chen, Dazheng
    Feng, Qian
    Xu, Shengrui
    Zhang, Yachao
    Zhang, Jincheng
    Zhang, Chunfu
    Hao, Yue
    VACUUM, 2022, 204
  • [47] Heteroepitaxial growth of α-Ga2O3 thin films on a-, c- and r-plane sapphire substrates by low-cost mist-CVD method
    Cheng Y.
    Xu Y.
    Li Z.
    Zhang J.
    Chen D.
    Feng Q.
    Xu S.
    Zhou H.
    Zhang J.
    Hao Y.
    Zhang C.
    Journal of Alloys and Compounds, 2020, 831
  • [48] Growth and characterization of Ga2O3 on sapphire substrates for UV sensor applications
    Wuu, Dong-Sing
    Ou, Sin-Liang
    Horng, Ray-Hua
    Ravadgar, Parvaneh
    Wang, Tzu-Yu
    Lee, Hsin-Ying
    OXIDE-BASED MATERIALS AND DEVICES III, 2012, 8263
  • [49] β-Ga2O3 epitaxial films deposited on epi-GaN/sapphire (0001) substrates by MOCVD
    Cao, Qiong
    He, Linan
    Xiao, Hongdi
    Feng, Xianjin
    Lv, Yuanjie
    Ma, Jin
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2018, 77 : 58 - 63
  • [50] Coherent growth of β-(Al x Ga1-x )2O3 alloy thin films on (010) β-Ga2O3 substrates using mist CVD
    Kaneko, Masahiro
    Nishinaka, Hiroyuki
    Kanegae, Kazutaka
    Yoshimoto, Masahiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2023, 62 (SF)