Plasma oscillations in nanotransistors for room temperature detection and emission of terahertz radiation

被引：14

作者：

El Fatimy, A. ^{[1
]}

Tauk, R. ^{[1
]}

Boubanga, S. ^{[1
]}

Teppe, F. ^{[1
]}

Dyakonova, N. ^{[1
]}

Knap, W. ^{[1
]}

Lyonnet, J. ^{[2
]}

Meziani, Y. M. ^{[3
]}

Otsuji, T. ^{[3
]}

Poisson, M. -A. ^{[4
]}

Morvan, E. ^{[4
]}

Bollaert, S. ^{[5
]}

Shchepetov, A. ^{[5
]}

Roelens, Y. ^{[5
]}

Gaquiere, Ch. ^{[5
]}

Theron, D. ^{[5
]}

Cappy, A. ^{[5
]}

机构：

[1] Univ Montpellier 2, CNRS, UMR 5650, GES, F-34095 Montpellier, France

[2] Univ Montpellier 2, CTM, ATEMI, F-34095 Montpellier, France

[3] Tohoku Univ, RIEC, Sendai, Miyagi 9808577, Japan

[4] Thales Res & Techn, F-91404 Orsay, France

[5] CNRS 8520, UMR, IEMN, F-59655 Villeneuve Dascq, France

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 1 | 2008年 / 5卷 / 01期

关键词：

DC CURRENT; TRANSISTORS;

D O I：

10.1002/pssc.200776585

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we present experimental results on room temperature terahertz (THz) detection/emission from nanotransistors as well as double grating gates structures. It shows that the emission spectra from GaN/AlGaN HEMT transistor can be successfully interpreted in the frame of the Dyakonov-Shur model which predicts that by heating/accelerating the electrons up to velocities comparable with plasma wave velocity can lead to instability and generation of plasma waves in the transistor channel. Studies of the current dependence of THz detection by InGaAs based HEMT is also presented. It is shown that in realistic transistor structures the room temperature resonant THz detection can be observed only upon applying a current high enough to produce fast/hot electrons. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：244 / +

页数：3

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