Optical properties of surface states in two-dimensional topological insulators

被引:1
|
作者
Huang, L. S. [1 ]
Dong, H. M. [1 ]
Duan, V. F. [1 ]
Liu, J. L. [2 ]
Zhao, C. X. [3 ]
机构
[1] China Univ Min & Technol, Sch Phys Sci & Technol, Xuzhou 221116, Jiangsu, Peoples R China
[2] China Univ Min & Technol, Sch Mat Sci & Engn, Xuzhou 221116, Jiangsu, Peoples R China
[3] Shanxi Normal Univ, Coll Phys & Informat Engn, Linfen 041004, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1364/AO.57.009275
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We present a simple and tractable approach to investigate the optical properties of surface states in two-dimensional (2D) topological insulators (TIs). The analytic expression of optical conductivity of surface states in 2D TIs are obtained based on the kinetic equations. It is found that universal optical conductance can be observed in the high frequency region, which does not depend on the temperature, the chemical potential, or the bandgap of the systems. This universal optical conductance is similar to that in graphene. However, the optical absorption edge of such surface states strongly depend on the chemical potential and the bandgap of the systems. There are obvious optical absorption peaks at low temperature in the low frequency region, which are very different from that in graphene. The bandgaps in surface states can be accurately experimentally measured by the optical absorption edges or the peaks. We expect that our theoretical results offer transparent understandings for the experimental results and applications of 2D TIs. (C) 2018 Optical Society of America
引用
收藏
页码:9275 / 9278
页数:4
相关论文
共 50 条
  • [21] Transport Properties of Two-Dimensional Topological Insulators and Excitonic Condensates
    M. V. Boev
    L. S. Braginskii
    V. M. Kovalev
    L. I. Magarill
    M. M. Mahmoodian
    M. V. Entin
    Optoelectronics, Instrumentation and Data Processing, 2020, 56 : 545 - 552
  • [22] Transport Properties of Two-Dimensional Topological Insulators and Excitonic Condensates
    Boev, M., V
    Braginskii, L. S.
    Kovalev, V. M.
    Magarill, L., I
    Mahmoodian, M. M.
    Entin, M., V
    OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING, 2020, 56 (05) : 545 - 552
  • [23] Electronic states induced by nonmagnetic defects in two-dimensional topological insulators
    Sablikov, Vladimir A.
    Sukhanov, Aleksei A.
    PHYSICAL REVIEW B, 2015, 91 (07)
  • [24] Interplay of bulk and edge states in transport of two-dimensional topological insulators
    Reinthaler, R. W.
    Hankiewicz, E. M.
    PHYSICAL REVIEW B, 2012, 85 (16)
  • [25] Two-dimensional electronic transport on the surface of three-dimensional topological insulators
    Li, Qiuzi
    Rossi, E.
    Das Sarma, S.
    PHYSICAL REVIEW B, 2012, 86 (23)
  • [26] Coulomb impurities in two-dimensional topological insulators
    Zhu, Jia-Lin
    Li, Guo
    Yang, Ning
    PHYSICAL REVIEW B, 2017, 95 (12)
  • [27] Conformal QED in two-dimensional topological insulators
    Menezes, Natalia
    Palumbo, Giandomenico
    Smith, Cristiane Morais
    SCIENTIFIC REPORTS, 2017, 7
  • [28] Two-Dimensional Topological Superconductivity with Antiferromagnetic Insulators
    Lado, J. L.
    Sigrist, M.
    PHYSICAL REVIEW LETTERS, 2018, 121 (03)
  • [29] Disorder effect in two-dimensional topological insulators
    Zhang, Xianglin
    Guo, Huaiming
    Feng, Shiping
    26TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT26), PTS 1-5, 2012, 400
  • [30] Supercurrent reversal in two-dimensional topological insulators
    Zyuzin, Alexander
    Alidoust, Mohammad
    Klinovaja, Jelena
    Loss, Daniel
    PHYSICAL REVIEW B, 2015, 92 (17):