Hierarchal modeling of creep behavior of SnAg solder alloys

被引：3

作者：

Pei, Min ^{[1
]}

Qu, Jianmin ^{[1
]}

机构：

[1] Georgia Inst Technol, Atlanta, GA 30332 USA

来源：

JOURNAL OF ELECTRONIC PACKAGING | 2008年 / 130卷 / 03期

关键词：

constitutive model; creep; SnAg lead-free solder;

D O I：

10.1115/1.2957321

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a microstructure-dependent creep model is developed that accounts for the hierarchal microstructure at multiple length scales. The model considers three distinguishable phases in the solder alloy at two different length scales: at the larger scale Sn dendrites of micrometer size are embedded in a homogeneous eutectic region; at a much smaller length scale the eutectic region consists of submicron size Ag3Sn particles embedded in a homogeneous Sn matrix. The model predictions agree well with creep test data of lanthanum doped SnAg solders.

引用

页码：0310041 / 0310046

页数：6

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