The integration of SOD as PMD for sub-58nm DRAM technology mode

被引：0
|
作者：
Stavrev, Momtchil [1 ]
Das, Arabinda [1 ]
Prenz, Heike [1 ]
Schardin, Markus [1 ]
Ho, Jar-Ming
Graf, Werrier [1 ]
机构：
[1] Qimonda Dresden GmbH & Co OHG, DRAM Technol, D-01099 Dresden, Germany
来源：
ADVANCED METALLIZATION CONFERENCE 2007 (AMC 2007) | 2008年 / 23卷
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper a detailed characterization of spin-on dielectric (SOD) films as pre-metal dielectric (PMD) for memory devices is reported. Several integration aspects (deposition, anneal, planarization and dry etching) have been studied. The application of SOD films as PMD for 58nm DRAM technology and below has been investigated. The achieved results show that SOD can be successfully used as dielectric in the contact level.
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页码：471 / 475
页数：5
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