Growth of Ge1-xSnx solid solutions from the liquid phase

被引:1
|
作者
Razzakov, AS [1 ]
机构
[1] Uzbek Acad Sci, NPO Fizika Solntse, Physicotech Inst, Tashkent 700135, Uzbekistan
关键词
Solid Solution; Liquid Phase;
D O I
10.1134/1.1401219
中图分类号
O3 [力学];
学科分类号
08 ; 0801 ;
摘要
[No abstract available]
引用
收藏
页码:548 / 550
页数:3
相关论文
共 50 条
  • [31] Double band inversion in the topological phase transition of Ge1-xSnx alloys
    Tan, Rui
    Yang, Qirui
    Chen, Ruiyuan
    Qiao, Yu
    Tan, Shouqiao
    Cao, Yanqiang
    Wang, Peng
    Chiang, Tai-Chang
    Wang, Xiaoxiong
    EPL, 2021, 133 (05)
  • [32] Lattice dynamics of Ge1-xSnx alloy nanowires
    Raha, Sreyan
    Biswas, Subhajit
    Doherty, Jessica
    Mondal, Prasanna Kumar
    Holmes, Justin D.
    Singha, Achintya
    NANOSCALE, 2022, 14 (19) : 7211 - 7219
  • [33] Spin Pumping in Epitaxial Ge1-xSnx Alloys
    Longo, Emanuele
    Concepcion, Omar
    Mantovan, Roberto
    Fanciulli, Marco
    Myronov, Maksym
    Bonera, Emiliano
    Pedrini, Jacopo
    Buca, Dan
    Pezzoli, Fabio
    ADVANCED QUANTUM TECHNOLOGIES, 2024,
  • [34] Raman scattering from Ge1-xSnx (x ≤ 0.14) alloys
    Navarro-Contreras, H.
    Rodriguez, A. G.
    Vidal, M. A.
    Perez-Ladron de Guevara, H.
    REVISTA MEXICANA DE FISICA, 2015, 61 (06) : 437 - 443
  • [35] Raman study of strained Ge1-xSnx alloys
    Lin, Hai
    Chen, Robert
    Huo, Yijie
    Kamins, Theodore I.
    Harris, James S.
    APPLIED PHYSICS LETTERS, 2011, 98 (26)
  • [36] Ni(Ge1-xSnx) Ohmic Contact Formation on N-Type Ge1-xSnx Using Selenium or Sulfur Implant and Segregation
    Tong, Yi
    Han, Genquan
    Liu, Bin
    Yang, Yue
    Wang, Lanxiang
    Wang, Wei
    Yeo, Yee-Chia
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (02) : 746 - 752
  • [37] Local Alloy Order in a Ge1-xSnx/Ge Epitaxial Layer
    Corley-Wiciak, Agnieszka Anna
    Chen, Shunda
    Concepcion, Omar
    Zoellner, Marvin Hartwig
    Gruetzmacher, Detlev
    Buca, Dan
    Li, Tianshu
    Capellini, Giovanni
    Spirito, Davide
    PHYSICAL REVIEW APPLIED, 2023, 20 (02)
  • [38] Assessment of Ge1-xSnx Alloys for Strained Ge CMOS Devices
    Takeuchi, S.
    Shimura, Y.
    Nishimura, T.
    Vincent, B.
    Eneman, G.
    Clarysse, T.
    Demeulemeester, J.
    Temst, K.
    Vantomme, A.
    Dekoster, J.
    Caymax, M.
    Loo, R.
    Nakatsuka, O.
    Sakai, A.
    Zaima, S.
    SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES, 2010, 33 (06): : 529 - 535
  • [39] The Theoretical Optical Gain of Ge1-xSnx Nanowires
    Xiong, Wen
    Fan, Wei-Jun
    Song, Zhi-Gang
    Tan, Chuan-Seng
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2020, 14 (04):
  • [40] Statistical model for the formation of the Ge1-xSnx alloy
    Ventura, C. I.
    Fuhr, J. D.
    Barrio, R. A.
    PHYSICA B-CONDENSED MATTER, 2009, 404 (18) : 2830 - 2833