Reversible phase transition between metastable structures of Si(111)c2x8 and 1x1 studied by high-temperature STM

被引：7

作者：

Chida, M ^{[1
]}

Minoda, H ^{[1
]}

Tanishiro, Y ^{[1
]}

Yagi, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys, Meguro Ku, Tokyo 1528551, Japan

来源：

SURFACE SCIENCE | 1998年 / 411卷 / 1-2期

关键词：

adatoms; nucleation; scanning tunneling microscopy; silicon; surface diffusion; surface energy; surface structure; morphology; roughness and topography; surface thermodynamics;

D O I：

10.1016/S0039-6028(98)00398-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We studied metastable reconstructions on quenched Si(lll) surfaces by using high-temperature STM. It was found that the c2 x 8 is most stable in metastable reconstructions of 2 x 2, c2 x 4, c2 x 8 and root 3 x root 3 on the quenched Si(111) surface. The reversible phase transition between the c2 x 8 and 1 x 1 structures at about 230 degrees C was found on the surface, which is similar to that between the c2 x 8 and 1 x 1 structures on Ge(111) surfaces around 300 degrees C. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：L822 / L827

页数：6

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