Evolution with time of the surface properties of high-purity germanium

被引：2
|
作者：
Ponpon, JP [1 ]
机构：
[1] CNRS, Lab PHASE, F-67037 Strasbourg 2, France
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2001年 / 457卷 / 1-2期
关键词：
germanium; etching; surface properties; stability;
D O I：
10.1016/S0168-9002(00)00747-6
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The surface recombination velocity and the oxide film thickness on high-purity germanium have been investigated by photo-conductivity decay measurements and by ellipsometry after different chemical preparations. Depending on the etching, not only the surface recombination velocity was significantly changed but also its stability on exposure to air. In contrast, no direct correlation could be established between the surface recombination velocity and the surface oxide film thickness. (C) 2001 Elsevier Science B.V. All rights reserved.
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页码：262 / 265
页数：4
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