High-Voltage and High-Current IGBT Press-pack Module for Power Grid

被引：0
|
作者：
Tan, Chunjian [1 ,2 ]
Wang, Shaogang [1 ,2 ]
Liu, Xu [1 ,2 ]
Jiang, Jing [3 ]
Zhang, Guoqi [2 ]
Ye, Huaiyu [1 ,4 ,5 ]
机构：
[1] Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Peoples R China
[2] Delft Univ Technol, Fac EEMCS, Mekelweg 4, NL-2628 CD Delft, Netherlands
[3] Fudan Univ, Acad & Engn Technol, Shanghai 200433, Peoples R China
[4] Chongqing Univ, Key Lab Optoelect Technol & Syst, Educ Minist China, Chongqing 400044, Peoples R China
[5] Chongqing Univ, Coll Optoelect Engn, Chongqing 400044, Peoples R China
来源：
2022 23RD INTERNATIONAL CONFERENCE ON THERMAL, MECHANICAL AND MULTI-PHYSICS SIMULATION AND EXPERIMENTS IN MICROELECTRONICS AND MICROSYSTEMS (EUROSIME) | 2022年
基金：
国家重点研发计划;
关键词：
D O I：
10.1109/EuroSimE54907.2022.9758878
中图分类号：
Q6 [生物物理学];
学科分类号：
071011 ;
摘要：
On the basis of the development and application requirements of flexible DC transmission techniques, a 1 kA/10 kV half-bridge IGBT press-pack module is studied. The module is composed of three subunits in series, and each subunit consists of IGBT chips in parallel. In order to solve the problem of chips failure caused by non-uniform rigid-contacting pressure in the press-pack modules, the elastic-contacting structure is designed to ensure excellent electrical connection between chips and contact terminal. During the operating conditions, the heat generated by IGBT chips can induce the increasing of internal temperature of the module, affecting the reliability of the module. A cooling structure is introduced between the subunits to solve the heat dissipation problem of the module. In addition, the thermal analysis of subunit and the cooling structure is performed by using the finite element simulation, and the chip layout and water-cooling scheme are optimized. The testing of electrical parameters of the IGBT module is also conducted.
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收藏
页数：4
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