Electrical Characterization of Nanostructured Sn-Doped ZnO Gas Sensors

被引：3
|
作者：
Trocino, S. [2 ]
Prakash, T. [3 ]
Jayaprakash, J. [3 ]
Donato, A. [1 ]
Neri, G. [1 ]
Donato, N. [2 ]
机构：
[1] Univ Messina, DIECII, Messina, Italy
[2] Univ Mediterranea Reggio Calabria, DICEAM, Reggio Di Calabria, Italy
[3] Sri Ramakrishna Mission Vidyalaya Coll Arts & Sci, Nanotechnol Lab, Coimbatore, Tamil Nadu, India
来源：
SENSORS | 2015年 / 319卷
关键词：
D O I：
10.1007/978-3-319-09617-9_34
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Chemoresistive devices based on pure-Zinc Oxide (ZnO) and doped-ZnO nanostructures with tin as dopant were investigated. The nanostructured materials, prepared by a simple and fast microwave irradiation method, have been widely characterized by X-Ray Diffraction (XRD), Fourier Transform InfraRed spectroscopy (FT-IR), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), Energy Dispersive Spectroscopy (EDS). The electrical and gas sensing properties, by measuring the resistance value and the electrical impedance, of pure and Sn-doped ZnO nanoparticles were evaluated in the monitoring of reducing (CO) and oxidizing (NO2) gases. Results demonstrated that, using tin-doped nanoparticles, a simple and low cost sensor device with improved properties in the detection of low concentrations of CO and NO2 can be developed.
引用
收藏
页码：191 / 196
页数：6
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