Inductively coupled plasma grown semiconductor films for low cost solar cells with improved light-soaking stability

被引：21

作者：

Shen, Chang-Hong ^{[1
]}

Shieh, Jia-Min ^{[1
,2
,3
]}

Huang, Jung Y. ^{[2
,3
]}

Kuo, Hao-Chung ^{[2
,3
]}

Hsu, Chih-Wei ^{[2
,3
]}

Dai, Bau-Tong ^{[1
]}

Lee, Ching-Ting ^{[4
,5
]}

Pan, Ci-Ling ^{[2
,3
,6
,7
]}

Yang, Fu-Liang ^{[1
]}

机构：

[1] Natl Nano Device Labs, Hsinchu 30078, Taiwan

[2] Natl Chiao Tung Univ, Dept Photon, Hsinchu, Taiwan

[3] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu, Taiwan

[4] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan

[5] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan

[6] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan

[7] Natl Tsing Hua Univ, Inst Photon Technol, Hsinchu 30013, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 03期

关键词：

MICROCRYSTALLINE SILICON; TRANSISTORS; DEPOSITION;

D O I：

10.1063/1.3615650

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the performance of a single-junction amorphous Si (a-Si) solar cell fabricated with inductively coupled plasma (ICP) deposition technique. The high-density plasma resulting from high dissociation capacity of ICP enables good-quality hydrogenated Si films to be synthesized at low temperatures. High-density ICP also promotes the diffusion of reactive radicals on substrates and forms a-Si:H films with low defect density (similar to 3 x 10(15) cm(-3)). We demonstrate single-junction a-Si solar cells with a conversion efficiency of 9.6% and improved light-soaking stability. This low thermal-budget thin-film technique could open up the feasibility of efficient thin film solar cells on flexible substrates. (C) 2011 American Institute of Physics. [doi:10.1063/1.3615650]

引用

页数：3

共 42 条

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