On the mechanism of electron trap generation in gate oxides

被引：5

作者：

Zhang, WD

Zhang, JF

Lalor, M

Burton, D

Groeseneken, G

Degraeve, R

机构：

[1] Liverpool John Moores Univ, Sch Engn, Liverpool L3 3AF, Merseyside, England

[2] IMEC, B-3001 Louvain, Belgium

来源：

MICROELECTRONIC ENGINEERING | 2001年 / 59卷 / 1-4期

关键词：

traps; defects; silicon dioxides; reliability; breakdown; CMOS;

D O I：

10.1016/S0167-9317(01)00652-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper investigates the applicability of the proposed models for electron trap generation in gate oxides. It is found that neither the electron-hole recombination nor the high oxide field itself is the main source for the generation. Although the hole injection alone can generate traps, the electron injection leads to additional generation, which is significant during the typical break-down test. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：89 / 94

页数：6

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