Compact broad beam ion implantation of 25 keV N+ in silicon

被引：0
|
作者：
Schlemm, H
机构：
来源：
ION IMPLANTATION TECHNOLOGY - 96 | 1997年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A very compact arrangement consisting of a broad beam ion source (Kaufman-ion-source) followed by a radio-frequency bandpass mass separator was used to generate a mass separated broad ion beam with an ion energy of 500 eV. After this a second ion acceleration to 4, 8 or 16 keV takes place at the gap to the substrate, combined with a defined broadening of the diameter of the ion beam. As an example N+-implantation into silicon was carried out in the dose range from 10(13) to 10(16) cm(-2). An Analysis by Rutherford-Barkscattering and Thermal Waves shows the implanted dose and the damage depth profit.
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页码：400 / 403
页数：4
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