Effect of Ag-alloying addition on the stress-temperature behavior of electroplated copper thin films

被引:13
|
作者
Menzel, S [1 ]
Strehle, S [1 ]
Wendrock, H [1 ]
Wetzig, K [1 ]
机构
[1] Leibniz Inst Festkorper & Werkstofforsch, IFW Dresden, D-01171 Dresden, Germany
关键词
electroplated Cu(Ag) alloy metallization; microstructure; stress-temperature behavior; electromigration;
D O I
10.1016/j.apsusc.2005.01.120
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The effect of Ag-alloying on the microstructural and thermo-mechanical properties of electrochemically deposited Cu thin films was investigated using the focused ion beam technique, scanning electron microscopy and the electron back scatter diffraction (EBSD) technique as well as the substrate curvature method to study their stress-temperature and stress relaxation behavior. The results show that the linear elastic behavior of 1 mu m thick Cu films is significantly improved by alloying. Additionally, after annealing such films have an excellent low electrical resistivity of 1.9-2.0 mu Omega cm, which meets the requirements of the roadmap ITRS [International Technology Roadmap for Semiconductors, Edition 2003, part: interconnect, available at http://public.itrs.net/]. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:211 / 214
页数:4
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