Room temperature grain growth in electroplated copper thin films

被引：12
|
作者：
Wendrock, H [1 ]
Brückner, W [1 ]
Hecker, M [1 ]
Koetter, TG [1 ]
Schloerb, H [1 ]
机构：
[1] Inst Solid State & Mat Res Dresden, D-01171 Dresden, Germany
来源：
MICROELECTRONICS RELIABILITY | 2000年 / 40卷 / 8-10期
关键词：
D O I：
10.1016/S0026-2714(00)00145-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The microstructural changes in copper thin films at room temperature after electrolytic deposition have been studied by X-ray diffraction, wafer curvature stress measurement, electrical resistance measurement, and local orientation mapping. Changes in texture and stress were found to take place earlier than grain growth became distinctly visible. Additionally, FIB cross sections showed the evolution of grains in third dimension. The results are discussed in terms of grain growth from the bottom to the top of the film. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1301 / 1304
页数：4
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