A Comprehensive Investigation on the Short Circuit Performance of MW-level IGBT Power Modules

被引：0
|
作者：
Wu, Rui [1 ]
Reigosa, Paula Diaz [1 ]
Iannuzzo, Francesco [1 ]
Wang, Huai [1 ]
Blaabjerg, Frede [1 ]
机构：
[1] Aalborg Univ, Pontoppidanstraede 101, Aalborg, Denmark
来源：
2015 17TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'15 ECCE-EUROPE) | 2015年
关键词：
Insulated-Gate Bipolar Transistor (IGBT); Power Modules; Short Circuit; Current Distribution;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
This paper investigates the short circuit performance of commercial 1.7 kV / 1 kA IGBT power modules by means of a 6 kA Non-Destructive-Tester. A mismatched current distribution among the parallel chips has been observed, which can reduce the short circuit capability of the IGBT power module under short circuit conditions. Further Spice simulations reveal that the stray parameters inside the module play an important role in contributing to such a phenomenon.
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页数：9
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