Spontaneous Emission from GaN/AlGaN based Terahertz Quantum Cascade Laser Structure grown on GaN Substrate

被引：0
|
作者：
Terashima, W. [1 ]
Hirayama, H. [1 ]
机构：
[1] RIKEN, Terahertz Quantum Device Lab, Terahertz Wave Res Program, Aoba Ku, Sendai, Miyagi 9800845, Japan
来源：
35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010) | 2010年
关键词：
DESIGN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We fabricated Nitrides-based THz-QCL structure grown on GaN substrate. The Output power for QCL on GaN substrate showed ten times higher value than that of QCL on MOCVD-GaN template. We for the first time observed THz spontaneous emission spectrum on the Nitrides-based THz-QCL on injection current.
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页数：2
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