Surface-induced thickness limit of conducting La-doped SrTiO3 thin films

被引:6
|
作者
Shin, Yeong Jae [1 ]
Lau, Claudia [2 ]
Lee, Sangjae [2 ]
Walker, Frederick J. [1 ]
Ahn, Charles H. [1 ,2 ]
机构
[1] Yale Univ, Dept Appl Phys, New Haven, CT 06511 USA
[2] Yale Univ, Dept Phys, New Haven, CT 06511 USA
关键词
FIELD-EFFECT TRANSISTORS; STRONTIUM-TITANATE; ELECTRONIC-STRUCTURE; SUPERCONDUCTIVITY; DEPLETION;
D O I
10.1063/1.5111771
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on a surface-induced, insulating, electrically dead layer in ultrathin conducting La-doped SrTiO3 thin films. Systematic studies on electrical properties as a function of film thickness and La-doping levels reveal that the insulating layer has a constant thickness and traps a constant amount of electron density regardless of La-doping levels. Growing an additional capping layer on top of the La-doped SrTiO3 surface counteracts the reduced conductivity, indicating a strong relationship between the insulating layer and the surface structure. Our results emphasize the importance of surface state studies for functional oxides in the thin film limit and provide a guiding principle for the fabrication of La-doped SrTiO3-based oxide nanoscale devices. Published under license by AIP Publishing.
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页数:5
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