InAs quantum dots on GaAs((25)over-bar1(1)over-bar)B:: STM and photoluminescence studies -: art. no. 045336

被引：12

作者：

Temko, Y

Suzuki, T

Xu, MC

Pötschke, K

Bimberg, D

Jacobi, K

机构：

[1] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

[2] Tech Univ Berlin, D-10623 Berlin, Germany

来源：

PHYSICAL REVIEW B | 2005年 / 71卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.71.045336

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The GaAs((2) over bar(5) over bar(1) over bar(1) over bar )B surface was prepared by molecular beam epitaxy and analyzed in situ by scanning tunneling microscopy (STM) and low-energy electron diffraction. Atomically resolved STM images of GaAs((2) over bar(5) over bar(1) over bar(1) over bar )B revealed a 131 reconstruction, terminated by Ga dimers. The deposition of 1.5 ML of InAs onto GaAs((2) over bar(5) over bar(1) over bar(1) over bar )B resulted in the two- to three-dimensional transition with appearance of small InAs quantum dots (QD's) with a very narrow size distribution and a high number density. Low-index (0 (1) over bar(1) over bar), ((1) over bar0 (1) over bar), and ((1) over bar(1) over bar(1) over bar )B facets, a rounded vicinal (00 (1) over bar) region for the main part, and a high-index ((1) over bar(3) over bar(5) over bar )B surface for a flat base determine a shape of the QD's that is totally unsymmetrical. Ex situ-performed photoluminescence measurements revealed a peak of the InAs QD's onGaAs((2) over bar(5) over bar(1) over bar(1) over bar )B with a similar intensity to the peak from the InAs QD's on the reference GaAs(001) surface, but with a higher emission energy and a smaller linewidth, indicating an ensemble of QD's, smaller and more uniform in size. A small redshift (from 1.33 eV to 1.20 eV) of the emission energy was achieved by optimizing the preparation parameters.

引用

页数：11

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