Synthesis and characterization of Zn(O,OH)S and AgInS2 layers to be used in thin film solar cells

被引：11
|
作者：
Vallejo, W. [1 ]
Arredondo, C. A. [2 ]
Gordillo, G. [2 ]
机构：
[1] Univ Nacl Colombia, Dept Quim, Bogota, Colombia
[2] Univ Nacl Colombia, Dept Fis, Bogota, Colombia
来源：
APPLIED SURFACE SCIENCE | 2010年 / 257卷 / 02期
关键词：
Thin films; Absorbent layer; Buffer layer; AgInS2; Zn(O; OH)S; CHEMICAL BATH DEPOSITION; NANOCRYSTALLINE ZNS; PHYSICAL-PROPERTIES;
D O I：
10.1016/j.apsusc.2010.07.021
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this paper AgInS2 and Zn(O,OH)S thin films were synthesized and characterized. AgInS2 layers were grown by co-evaporation from metal precursors in a two-step process, and, Zn(O,OH)S thin films were deposited from chemical bath containing thiourea, zinc acetate, sodium citrate and ammonia. X-ray diffraction measurements indicated that AgInS2 thin films grown with chalcopyrite structure, and the as-grown Zn(O,OH)S thin films were polycrystalline. It was also found that the AgInS2 films presented p-type conductivity, a high absorption coefficient (greater than 10(4) cm(-1)) and energy band-gap E-g of about 1.95 eV, Zn(O,OH),S thin films presented E-g of about 3.89 eV. Morphological analysis showed that under this synthesis conditions Zn(O,OH),S thin films coated uniformly the absorber layer. Additionally, the Zn(O,OH)S kinetic growth on AgInS2 layer was studied also. Finally, the results suggest that these layers possibly could be used in one-junction solar cells and/or as top cell in a tandem solar cell. (C) 2010 Elsevier B. V. All rights reserved.
引用
收藏
页码：503 / 507
页数：5
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