Tunable Pulse Generator for Ultra-Wideband Applications

被引:0
|
作者
Jin, Renfeng [1 ]
Halder, Subrata [1 ]
Hwang, James C. M. [1 ]
Law, Choi L. [2 ]
机构
[1] Lehigh Univ, Dept Elect & Comp Engn, 5 E Packer Ave, Bethlehem, PA 18015 USA
[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
关键词
Heterojunctions; heterojunction bipolar transistors; pulse amplifiers; pulse analysis; pulse circuits; pulse measurement; UWB; TRANSMITTER;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
For the first time, an ultra-wideband pulse generator is fabricated in GaAs HBT IC technology. The generator includes delay and differential circuits to convert a TTL input into an impulse signal and a Class-C amplifier to increase the pulse amplitude while compressing the pulse width. By adjusting the bias of the Class-C amplifier, the pulse amplitude can be varied linearly between 3.5 V and 11.5 V while maintaining the pulse width at 0.3 +/- 0.1 ns. Alternatively, the pulse width can be varied linearly between 0.25 ns and 0.65 ns, while maintaining the pulse amplitude at 10 +/- 1 V. Finally, the amplified impulse signal can be shaped into a monocycle signal by an L-C derivative circuit. These results compare well with that of pulse generators fabricated in GaAs HEMT, Si CMOS or Si discrete technologies.
引用
收藏
页码:2272 / +
页数:2
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