Gate-first process and EOT-scaling of III-V nanowire-based vertical transistors on Si

被引：0
|
作者：
Tomioka, Katsuhiro [1 ,1 ]
Fukui, Takashi [1 ]
机构：
[1] Hokkaido Univ, GS Informat Sci & Technol, Sapporo, Hokkaido 0608628, Japan
来源：
2013 71ST ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | 2013年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：15 / +
页数：2
相关论文
共 43 条
  • [1] Vertical III-V Nanowire Transistors and CMOS Circuits on Si
    Svensson, Johannes
    Dey, Anil
    Jacobsson, Daniel
    Wernersson, Lars-Erik
    2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016,
  • [2] Analytical Gate Capacitance Modeling of III-V Nanowire Transistors
    Marin, Enrique G.
    Garcia Ruiz, Francisco J.
    Maria Tienda-Luna, Isabel
    Godoy, Andres
    Gamiz, Francisco
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (05) : 1590 - 1599
  • [3] Vertical III-V Nanowire-Channel on Si
    Tomioka, Katsuhiro
    Fukui, Takashi
    SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 11, 2013, 58 (07): : 99 - 114
  • [4] Vertical III-V Nanowire Device Integration on Si(100)
    Borg, Mattias
    Schmid, Heinz
    Moselund, Kirsten E.
    Signorello, Giorgio
    Gignac, Lynne
    Bruley, John
    Breslin, Chris
    Das Kanungo, Pratyush
    Werner, Peter
    Riel, Heike
    NANO LETTERS, 2014, 14 (04) : 1914 - 1920
  • [5] Electrical performance of III-V gate-all-around nanowire transistors
    Razavi, Pedram
    Fagas, Giorgos
    APPLIED PHYSICS LETTERS, 2013, 103 (06)
  • [6] Vertical Tunnel FETs Using III-V Nanowire/Si Heterojunctions
    Tomioka, Katsuhiro
    Fukui, Takashi
    SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 4, 2014, 61 (03): : 81 - 89
  • [7] III-V Semicondutor Nanostructures And Iontronics: InAs Nanowire-based Electric Double Layer Field Effect Transistors
    Prete, Domenic
    Lieb, Johanna
    Demontis, Valeria
    Bellucci, Luca
    Tozzini, Valentina
    Ercolani, Daniele
    Zannier, Valentina
    Sorba, Lucia
    Ono, Shimpei
    Beltram, Fabio
    Sacepe, Benjamin
    Rossella, Francesco
    NANOINNOVATION 2018, 2019, 2145
  • [8] A III-V nanowire channel on silicon for high-performance vertical transistors
    Tomioka, Katsuhiro
    Yoshimura, Masatoshi
    Fukui, Takashi
    NATURE, 2012, 488 (7410) : 189 - +
  • [9] Direct growth of III-V nanowire-based top cell for tandem on Silicon
    de Lepinau, Romaric
    Tong, Capucine
    Scaccabarozzi, Andrea
    Oehler, Fabrice
    Chen, Hung-Ling
    Berenguier, Baptiste
    Delamarre, Amaury
    Collin, Stephane
    Cattoni, Andrea
    2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2020, : 1842 - 1845
  • [10] Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors
    Li, Ziyuan
    Allen, Jeffery
    Allen, Monica
    Tan, Hark Hoe
    Jagadish, Chennupati
    Fu, Lan
    MATERIALS, 2020, 13 (06)
12345