Development of a Simple Broadband Microstrip to Waveguide Transition

被引:0
|
作者
Elsaesser, M. [1 ]
Navarro, E. Miralles
Ziegler, V. [2 ]
Vietzorreck, L. [1 ]
机构
[1] Tech Univ Munich, Lehrstuhl Hochfrequenztech, Arcisstr 21, D-80333 Munich, Germany
[2] Airbus Grp Innovat, Willy Messerschmitt Str 1, D-85521 Ottobrunn, Germany
来源
2017 INTERNATIONAL CONFERENCE ON ELECTROMAGNETICS IN ADVANCED APPLICATIONS (ICEAA) | 2017年
关键词
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel microstrip to waveguide transition fabricated on a single substrate is proposed. The transition is based on a proximity fed E-shaped patch antenna element which allows for double resonances. Thus the bandwidth of the transition can approximately be doubled compared to a transition which utilizes a regular patch element without increasing the transversal dimensions. The influence of the critical patch parameters is discussed. Numerical resultsshow an input reflection coefficient below -15 dB between 15.97 GHz and 16.49 GHz and a minimal insertion loss of 1 dB. The bandwidth is approximately 3.2% at the center frequency of operation (16.23 GHz). Measurement results of the fabricated transition are presented and compared with simulation results.
引用
收藏
页码:1700 / 1703
页数:4
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