Deep centers in undoped semi-insulating InP

被引：21

作者：

Fang, ZQ ^{[1
]}

Look, DC

Uchida, M

Kainosho, K

Oda, O

机构：

[1] Wright State Univ, Dept Phys, Dayton, OH 45435 USA

[2] Japan Energy Corp, Mat & Components Lab, Toda, Saitama 335, Japan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1998年 / 27卷 / 10期

关键词：

deep centers; semi-insulating (SI) InP; thermally stimulated current (TSC) spectroscopy; wafer annealing;

D O I：

10.1007/s11664-998-0152-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Undoped semi-insulating (SI) InP samples, subjected to one-step and multi-step wafer annealing, and lightly and normally Fe-doped SI InP samples without annealing have been characterized by thermally stimulated current (TSC) spectroscopy. A dominant deep center at 0.63 eV is found in all samples and is undoubtedly due to iron. Two prominent TSC traps, T-b (0.44 eV) and T-d (0.33 eV), found in undoped SI InP, are thought to be related to the phosphorus antisite P-In, and traps at low temperatures, like T-e* (0.19 eV), to the phosphrus vacancy V-P.

引用

页码：L68 / L71

页数：4

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