Electron transport and Goos-Hanchen shift in graphene with electric and magnetic barriers: optical analogy and band structure

被引:82
|
作者
Sharma, Manish [1 ]
Ghosh, Sankalpa [2 ,3 ]
机构
[1] Indian Inst Technol Delhi, Ctr Appl Res Elect, New Delhi 110016, India
[2] Indian Inst Technol Delhi, Dept Phys, New Delhi 110016, India
[3] Max Planck Inst Phys Komplexer Syst, D-01187 Dresden, Germany
关键词
QUANTUM INTERFERENCE; DIRAC FERMIONS; NANOSTRUCTURES; COLLOQUIUM; SPIN; LENS;
D O I
10.1088/0953-8984/23/5/055501
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Transport of massless Dirac fermions in graphene monolayers is analysed in the presence of a combination of singular magnetic barriers and applied electrostatic potential. Extending a recently proposed (Ghosh and Sharma 2009 J. Phys.: Condens. Matter 21 292204) analogy between the transmission of light through a medium with modulated refractive index and electron transmission in graphene through singular magnetic barriers to the present case, we find the addition of a scalar potential profoundly changes the transmission. We calculate the quantum version of the Goos-Hanchen shift that the electron wave suffers upon being totally reflected by such barriers. The combined electric and magnetic barriers substantially modify the band structure near the Dirac point. This affects transport near the Dirac point significantly and has important consequences for graphene-based electronics.
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页数:17
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