Carrier recombination in Cu doped CdS thin films: Photocurrent and optical studies

被引：40

作者：

Panda, Richa ^{[1
]}

Rathore, Vandana ^{[1
]}

Rathore, Manoj ^{[2
]}

Shelke, Vilas ^{[3
]}

Badera, Nitu ^{[4
]}

Chandra, L. S. Sharath ^{[5
,6
]}

Jain, Deepti ^{[6
]}

Gangrade, Mohan ^{[6
]}

Shripati, T. ^{[6
]}

Ganesan, V. ^{[6
]}

机构：

[1] Acropolis Inst Technol & Res, Bhopal 462002, MP, India

[2] MPCST, Bhopal 462003, MP, India

[3] Barkatullah Univ, Dept Phys, Bhopal 462026, MP, India

[4] Malwa Inst Sci & Technol, Indore, MP, India

[5] Raja Ramanna Ctr Adv Technol, Indore 452013, MP, India

[6] UGC DAE CSR, Indore 452001, MP, India

来源：

APPLIED SURFACE SCIENCE | 2012年 / 258卷 / 12期

关键词：

Thin film; Photocurrent; Quenching; Recombination; Solar materials; CHEMICALLY DEPOSITED CDS; SPRAY-PYROLYSIS TECHNIQUE; OPTOELECTRONIC PROPERTIES; SOLAR-CELLS; PHOTOCONDUCTIVITY; DIODES; FE;

D O I：

10.1016/j.apsusc.2012.01.131

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Quenching of photocurrent in Cu doped CdS prepared by Spray pyrolysis technique is reported. Anomalous changes in surface morphology are seen at 2% of Cu in CdS. Surface morphology of pure CdS film shows rod like structure. Aspect ratio of such rods has a maximum around 2% Cu substitution. This in turn produces anomalous changes in photoconductivity, which is further supported by marked changes seen in mean crystallite size, strain and grain size, roughness, transmittance, optical band gap, activation energy and finally in the photocurrent. Pronounced effects are seen in transmittance as a broad profile centered on 590 nm. The observed effects are explained in terms of carrier recombination mechanisms. (C) 2012 Elsevier B. V. All rights reserved.

引用

页码：5086 / 5093

页数：8

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