Lattice sites of implanted Fe in Si -: art. no. 014115

The angular distribution of beta(-) particles emitted by the radioactive isotope Fe-59 was monitored following implantation into Si single crystals at fluences from 1.4 x 10(12) cm(-2) to 1 x 10(14) cm(-2). We identified Fe on three distinct sites: ideal substitutional, displaced substitutional and displaced tetrahedral interstitial. Whereas displaced substitutional Fe was dominating for annealing temperatures below 500 degrees C, annealing between 500-700 degrees C caused the majority of Fe to occupy displaced tetrahedral interstitial sites. Ideal substitutional positions were increasingly populated following annealing at 800 degrees C and above. A comparison of the emission channeling results to Mossbauer and electron paramagnetic resonance experiments is given.