Microstructure Simulation of Grain Growth in Cu Through Silicon Via Using Phase-Field Modeling

被引：0

作者：

Nabiollahi, Nabi ^{[1
,2
]}

Moelans, Nele ^{[2
]}

Gonzalez, Mario ^{[1
]}

De Messemaeker, Joke ^{[1
]}

Wilson, Christopher J. ^{[1
]}

Croes, Kristof ^{[1
]}

Beyne, Eric ^{[1
]}

De Wolf, Ingrid ^{[1
,2
]}

机构：

[1] IMEC, Leuven, Belgium

[2] KULeuven, Dept Met & Mat Engn, Leuven, Belgium

来源：

2014 15TH INTERNATIONAL CONFERENCE ON THERMAL, MECHANICAL AND MULTI-PHYSICS SIMULATION AND EXPERIMENTS IN MICROELECTRONICS AND MICROSYSTEMS (EUROSIME) | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a time-efficient 3D phase-field model, for simulating grain growth in Through Silicon Via (TSV) is presented. This model is modified to model grain growth in the cylindrical shape of a TSV to capture the effect of temperature in its microstructure. The data generated from this simulation is used to explain large distribution of Cu pumping (i.e. non reversible thermal expansion of TSV). To achieve this, generated results must be used as an input in a Finite Element Model of a TSV structure to study the effect of grain growth and asymmetry in distribution of Cu pumping. Results generated from a sample FEM model with grain structure input confirms this capability.

引用

页数：4

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