Characterisation of Zn1-xMgxSe mixed crystals by photoacoustic method

被引：4
|
作者：
Firszt, F
Legowski, S
Meczynska, H
Pawlak, J
Sekulska, B
Szatkowski, J
Zakrzewski, J
Paszkowicz, W
机构：
来源：
SOLID STATE CRYSTALS: GROWTH AND CHARACTERIZATION | 1997年 / 3178卷
关键词：
wide-gap II-VI semiconductors; mixed crystals; Zn1-xMgxSe; photoacoustic effect;
D O I：
10.1117/12.280737
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The photoacoustic spectroscopy with a piezoelectric transducer was employed to evaluate the band gaps of a series of Zn1-xMgxSe mixed crystals of different composition. The measurements were performed at 300K, 90K and 6K. The Jackson-Amer model of photoacoustic effect for thermally thin and optically thick samples was applied For samples of x > 0.18 (wurtzite structure) subgap optical absorption was observed.
引用
收藏
页码：217 / 220
页数：4
相关论文
共 50 条
  • [41] Optical properties of Zn1-xMgxSe epilayers studied by spectroscopy methods
    Glowacki, G
    Gapinski, A
    Derkowska, B
    Bala, W
    Sahraoui, B
    ACTA PHYSICA POLONICA A, 1998, 94 (02) : 321 - 325
  • [42] Properties of the nitrogen acceptor in Zn1-xMgxSe alloys with varying Mg concentration
    Morhain, C
    Seghier, D
    Vögele, B
    O'Donnell, C
    Prior, KA
    Cavenett, BC
    Gislason, HP
    JOURNAL OF CRYSTAL GROWTH, 2000, 214 : 482 - 486
  • [43] Auger depth profile analysis and photoluminescence investigations of Zn1-xMgxSe alloys
    Bukaluk, A
    Trzcinski, A
    Firszt, F
    Legowski, S
    Meczynska, H
    SURFACE SCIENCE, 2002, 507 : 175 - 180
  • [44] CRYSTAL-STRUCTURE AND RAMAN-SCATTERING IN ZN1-XMGXSE ALLOYS
    HUANG, DM
    JIN, CX
    WANG, DH
    LIU, XH
    WANG, J
    WANG, X
    APPLIED PHYSICS LETTERS, 1995, 67 (24) : 3611 - 3613
  • [45] Structural investigations of polytypes in Zn1-xMgxSe by transmission electron microscopy and cathodoluminescence
    Falke, U
    Cichos, A
    Firszt, F
    Meczynska, H
    Dluzewski, P
    Paszkowicz, W
    Lenzner, J
    Hietschold, M
    JOURNAL OF CRYSTAL GROWTH, 1998, 184 : 1015 - 1020
  • [46] Raman analysis of Zn1-xMgxSe layers grown on GaAs and ZnTe substrates
    Renucci, MA
    Frandon, J
    Glowacki, G
    Gapinski, A
    Rozploch, F
    Bala, W
    ACTA PHYSICA POLONICA A, 1996, 90 (05) : 1065 - 1069
  • [47] Predicted electronic properties of zinc-blende Zn1-xMgxSe alloys
    Charifi, Z
    Baaziz, H
    Bouarissa, N
    MATERIALS CHEMISTRY AND PHYSICS, 2004, 84 (2-3) : 273 - 278
  • [48] Conduction-and valence band offsets of Zn1-xMgxSe/Zn1-yMgySe heterointerfaces
    Al-Hagan, O. A.
    Bouarissa, N.
    Gueddim, A.
    Algarni, H.
    Alhuwaymel, T. F.
    Khan, M. Ajmal
    PHYSICA B-CONDENSED MATTER, 2018, 543 : 54 - 59
  • [49] Localization of excited carriers in Zn1-xMgxSe and Zn1-x-yMgxCdySe solid solutions
    Firszt, F.
    Legowski, S.
    Meczynska, H.
    Huang, C. T.
    Hsu, H. P.
    Huang, Y. S.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 53 (01) : 13 - 18
  • [50] Density functional theory study on the origins of the gap bowing in Zn1-xMgxSe
    Zaoui, A
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (15) : 4025 - 4033
12345