Nonequilibrium dephasing in two-dimensional indium oxide films

被引:28
|
作者
Ovadyahu, Z [1 ]
机构
[1] Hebrew Univ Jerusalem, Racah Inst Phys, IL-91904 Jerusalem, Israel
关键词
D O I
10.1103/PhysRevB.63.235403
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on results of resistance R and magnetoresistance in diffusive indium oxide films measured down to T=0.28 K. Analyzing the data using weak-localization theory shows that the phase-coherent time tau (phi) increases without bound as T-->0. However, this result is obtained only when the voltage applied to the sample V is sufficiently small. When V is not small, tau (phi) may appear to "saturate" while R continues to increase as T-->0. Possible reasons for this intriguing behavior are discussed. It is argued that in out-of-equilibrium situations R(T) and tau (phi)(T) need not behave similarly. We suggest a heuristic picture, involving two-level systems, which might be consistent with our observations.
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页数:14
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