Microstructural study of a passivation layer on GaAs: An application of X-ray reflectivity under grazing angles using a synchrotron source

被引：0
|
作者：
Crompton, KE [1 ]
Finlayson, TR
Kirchner, C
Seitz, M
Klemradt, U
机构：
[1] Monash Univ, Sch Phys & Mat Engn, Clayton, Vic 3800, Australia
[2] Univ Munich, Sekt Phys, D-80539 Munich, Germany
[3] Univ Munich, Ctr Nanosci, D-80539 Munich, Germany
来源：
SURFACE REVIEW AND LETTERS | 2003年 / 10卷 / 2-3期
关键词：
D O I：
10.1142/S0218625X03004925
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
X-ray specular reflectivities of GaAs samples passivated with a thin film of (3-mercaptopropyl)-trimethoxysilane (MPT) have been studied using bending-magnet synchrotron radiation. Various preparation procedures covering etching the GaAs, MPT deposition and its baking have been investigated. An oxide film is always observed between the GaAs and MPT films. The microstructural parameters, such as film thickness, density and interfacial roughness (including the external surface), have been determined from appropriate modeling of the reflectivity. The surface roughness has been compared with a direct measurement using tapping-mode atomic force microscopy. The results are discussed with reference to the potential applications of GaAs as a biosensor.
引用
收藏
页码：373 / 379
页数：7
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