Low-temperature preparation of BaTiO3 thin film by MOD and hydrothermal treatment

被引:0
|
作者
Wei, ZQ [1 ]
Xu, HQ [1 ]
Yamashita, K [1 ]
Okuyama, M [1 ]
机构
[1] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan
关键词
hydrothermal; MOD; BaTiO3; thickness;
D O I
10.1117/12.408342
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
BaTiO3 (BTO) thin films with perovskite structure have been prepared on Ti/Pt/Ti/SiO2/Si substrate using a combined process of conventional MOD process and hydrothermal method. BTO thin films with polycrystalline structure are obtained on silicon at low processing temperatures lower than 200 degreesC. The film thickness ranged from 0.20 to 0.84 mum. The structural and ferroelectric properties were investigated as a function of film thickness by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Raman Spectroscopy and ferroelectric test system. The film retains the tetragonal perovskite structure with the (100) preferred orientation perpendicular to the film surface independent of film thickness. With increasing of thickness, polarization and coercive field of BaTiO3 thin film increased and shown the same trends.
引用
收藏
页码:641 / 644
页数:4
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