A Thermal-Diffusivity-Based Frequency Reference in Standard CMOS With an Absolute Inaccuracy of ±0.1% From -55 °C to 125 °C

被引：22
|
作者：
Kashmiri, S. Mahdi [1 ]
Pertijs, Michiel A. P. [1 ]
Makinwa, Kofi A. A. [1 ]
机构：
[1] Delft Univ Technol, Elect Instrumentat Lab DIMES, Delft, Netherlands
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2010年 / 45卷 / 12期
关键词：
Band-gap temperature sensor; DCO; digitally assisted; electrothermal frequency-locked loop; on-chip frequency reference; standard CMOS; thermal-diffusivity; OSCILLATOR; CLOCK; 3-SIGMA; JITTER; NOISE; MEMS;
D O I：
10.1109/JSSC.2010.2076343
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An on-chip frequency reference exploiting the well-defined thermal-diffusivity (TD) of IC-grade silicon has been realized in a standard 0.7 mu m CMOS process. A frequency-locked loop (FLL) locks the frequency of a digitally controlled oscillator (DCO) to the process-insensitive phase shift of an electrothermal filter (ETF). The ETF's phase shift is determined by its geometry and by the thermal diffusivity of bulk silicon (D). The temperature dependence of D is compensated for with the help of die-temperature information obtained by an on-chip band-gap temperature sensor. The resulting TD frequency reference has a nominal output frequency of 1.6 MHz and dissipates 7.8 mW from a 5 V supply. Measurements on 16 devices show that it has an absolute inaccuracy of +/-0.1% (sigma = +/-0.05%) over the military temperature range (-55 degrees C to 125 degrees C), with a worst case temperature coefficient of +/-11.2 ppm/degrees C.
引用
收藏
页码：2510 / 2520
页数：11
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