High-aspect-ratio aluminum-doped zinc oxide nanomechanical resonator

被引：0

作者：

Nguyen Van Toan ^{[1
]}

Inomata, Naoki ^{[1
]}

Ono, Takahito ^{[1
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Aoba Ku, 6-6-01 Aramaki Aza Aoba, Sendai, Miyagi 9808579, Japan

来源：

IEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING | 2017年 / 12卷

关键词：

nanomechanical structure; aluminum-doped zinc oxide; deep reactive ion etching; atomic layer deposition; FABRICATION; SUBSTRATE;

D O I：

10.1002/tee.22561

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on the patterning of a high-aspect-ratio aluminum-doped zinc oxide (AZO) capacitive resonator based on the combination of the deep reactive ion etching (deep RIE) and atomic layer deposition (ALD) processes. The suspended AZO capacitive resonator is successfully demonstrated. Its resonant frequency is observed at 10.4kHz with a quality factor (Q factor) of approximately 500 in a vacuum chamber. (C) 2017 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.

引用

页码：S141 / S142

页数：2

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