Impact of High-k HfO2 Dielectric on the Low-Frequency Noise Behaviors in Amorphous InGaZnO Thin Film Transistors

被引：13

作者：

Park, Jae Chul ^{[1
]}

Kim, Sun Il ^{[1
]}

Kim, Chang Jung ^{[1
]}

Kim, Sungchul ^{[2
]}

Kim, Dae Hwan ^{[2
]}

Cho, In-Tak ^{[3
]}

Kwon, Hyuck-In ^{[4
]}

机构：

[1] Samsung Adv Inst Technol, Semicond Lab, Yongin 446712, Gyeonggi, South Korea

[2] Kookmin Univ, Sch Elect Engn, Seoul 136702, South Korea

[3] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea

[4] Chung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 10期

关键词：

1/F NOISE; P-MOSFETS; MOBILITY; GATE; SI;

D O I：

10.1143/JJAP.49.100205

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the impact of high-k HfO2 gate dielectric on the low-frequency noise ( LFN) behaviors of amorphous indium-gallium-zinc oxide thin-film transistors by comparing the LFNs of devices with SiO2 and HfO2 dielectrics. Measured LFNs are nearly 1/f type for both devices, but the normalized noise for the HfO2 device is around one order of magnitude higher than that for the SiO2 device. The bulk mobility fluctuation is considered as the dominant LFN mechanism in both devices, and the increased LFN in the HfO2 device is attributed to the enhanced mobility fluctuation by the remote phonon scattering from the HfO2. (C) 2010 The Japan Society of Applied Physics

引用

页码：1002051 / 1002053

页数：3

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