Determining the Free Carrier Density in Cd x Hg1-x Te Solid Solutions from Far-Infrared Reflection Spectra

被引：0
|
作者：
Belov, A. G. [1 ]
Denisov, I. A. [1 ]
Kanevskii, V. E. [1 ]
Pashkova, N. V. [1 ]
Lysenko, A. P. [2 ]
机构：
[1] AO State Sci Res & Design Inst Rare Met Ind Gired, Moscow 119017, Russia
[2] Natl Res Univ, Higher Sch Econ, Moscow 101000, Russia
来源：
SEMICONDUCTORS | 2017年 / 51卷 / 13期
关键词：
reflection spectra; CdxHg1-xTe solid solutions; determination of the free carrier density; plasmon-phonon interaction; PLASMA RESONANCE;
D O I：
10.1134/S1063782617130048
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A new contactless nondestructive technique for determining the free carrier density in single-crystal samples of Cd (x) Hg1-x Te solid solutions and multilayer epitaxial heterostructures based on them from farinfrared reflection spectra is proposed. The characteristic point and corresponding wavenumber in the room-temperature spectral dependence of the reflectance are determined. The heavy hole density is established using calculated calibration curves. It is shown that in constructing the calibration curves, it is necessary to take into account the interaction of plasma oscillations with longitudinal optical phonons.
引用
收藏
页码：1732 / 1736
页数：5
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