All-optical NAND gate using cross-gain modulation in semiconductor optical amplifiers

被引：65
|
作者：
Kim, SH
Kim, JH
Yu, BG
Byun, Y
Jeon, YM
Lee, S
Woo, DH
Kim, SH
机构：
[1] Korea Inst Sci & Technol, Photon Res Ctr, Seoul 136791, South Korea
[2] Hankuk Aviat Univ, Dept Liberal Arts & Sci, Koyang 2001, South Korea
[3] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA
来源：
ELECTRONICS LETTERS | 2005年 / 41卷 / 18期
关键词：
D O I：
10.1049/el:20052320
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
By using gain nonlinearity characteristics of a semiconductor optical amplifier, an all-optical NAND gate at 10 Gbit/s is demonstrated. The all-optical NAND gate operates in single mechanism, which is crossgain modulation. In the NAND gate (A (B) over bar +(A) over bar), Boolean A (B) over bar is obtained by using signal A as a probe beam and signal B as a pump beam in SOA-1. Also, Boolean A is obtained by using the clock signal as a probe beam and signal A as a pump beam in SOA-2. By adding the two outputs from SOA-1 and SOA-2, Boolean (A) over bar +A (B) over bar (logic NAND) can be acquired. The extinction ratio is about 6.1 dB.
引用
收藏
页码：1027 / 1028
页数：2
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