Flows for model-based layout correction of mask proximity effects

被引：1
|
作者：
Cobb, N [1 ]
Maurer, W [1 ]
机构：
[1] Mentor Graph Corp, San Jose, CA 95131 USA
来源：
23RD ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PTS 1 AND 2 | 2003年 / 5256卷
关键词：
mask making; models; OPC; MPC;
D O I：
10.1117/12.518477
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
In this paper, we will investigate methods for adapting model-based OPC tools to do layout correction (biasing) for mask making proximity effects. (Mask Proximity Correction) We will discuss three aspects of this problem: (1) typical models to use for mask making (2) calibration of the model using mask measurement data (3) one-pass versus two-pass flows for correction of mask making proximity effects.
引用
收藏
页码：956 / 964
页数：9
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