A sub-1V bandgap reference circuit using subthreshold current

被引：0
|
作者：
Lin, HC [1 ]
Liang, CJ [1 ]
机构：
[1] Natl Chung Hsing Univ, Dept Elect Engn, Taichung, Taiwan
来源：
2005 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), VOLS 1-6, CONFERENCE PROCEEDINGS | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A bandgap reference circuit employing subthreshold current is proposed. Only a small fraction Of V(BE) is utilized to generate the reference voltage of 170mV. Since the subthreshold current of MOSFET's is used as the current source, the circuit only consumes 2.4 mu W at supply voltage of M It was fabricated using 0.18 mu m CMOS triple-well. technology on chip area of 0.029mm(2). Both of the measurement and the simulation demonstrate the reference voltage variation is 1.3mV from -20 degrees C to 100 degrees C and is 1.1mV per volt for supply voltage from 0.95V to 2.5V.
引用
收藏
页码：4253 / 4256
页数：4
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