Three-dimensional nanojunction device models for photovoltaics

被引:14
|
作者
Wangperawong, Artit [2 ]
Bent, Stacey F. [1 ]
机构
[1] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
基金
美国国家科学基金会;
关键词
SOLAR-CELLS;
D O I
10.1063/1.3595411
中图分类号
O59 [应用物理学];
学科分类号
摘要
A model is developed to describe the behavior of three-dimensionally nanostructured photovoltaic devices, distinguishing between isolated radial pn junctions and interdigitated pn junctions. We examine two specific interdigitated architectures, the point-contact nanojunction and the extended nanojunction, which are most relevant to experimental devices reported to date but have yet to be distinguished in the field. The model is also applied to polycrystalline CdTe devices with inverted grain boundaries. We demonstrate that for CdTe/CdS solar cells using low-quality materials, the efficiency of the extended nanojunction geometry is superior to other designs considered. (C) 2011 American Institute of Physics. [doi:10.1063/1.3595411]
引用
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页数:3
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