Effect of Germanium Codoping on the Grown-In Oxide Precipitates in Nitrogen-Doped Czochralski Silicon

被引：0
|
作者：
Lan, Wu [1 ]
Zhao, Tong [1 ]
Wu, Defan [1 ]
Yang, Deren [1 ]
Ma, Xiangyang [1 ]
机构：
[1] Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2022年 / 219卷 / 05期
关键词：
internal gettering; germanium-codoping; grown-in oxide precipitates; nitrogen-doped Czochralski silicon (NCZ); OXYGEN-RELATED DEFECTS; CRYSTAL-GROWTH;
D O I：
10.1002/pssa.202100642
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effects of germanium (Ge)-codoping at 10(18), 10(19), or 10(20 )cm(-3) level on the grown-in oxide precipitates in 10(14 )cm(-3) level nitrogen (N)-doped Czochralski (NCZ) silicon have been investigated. It is found that Ge-codoping enhances the formation of relatively larger grown-in oxide precipitates. However, such enhancement effect weakens with the increasing Ge-codoping concentration. On this basis, the effect of 10(18) cm(-3) level Ge-codoping on the near-surface denuded zone (DZ) and bulk microdefects (BMDs) associated with oxygen precipitation in NCZ silicon subjected to an anneal at 1100 degrees C for 4 h (1100 degrees C/4 h) has been paid close attention. Moreover, the sustainability of the DZ in the 1100 degrees C/4 h -annealed NCZ silicon subjected to a "copper decoration" or a rigorous oxygen precipitation anneal featuring a prolonged nucleation anneal has been addressed. Thus, it is technologically significant to learn that for the 1100 degrees C/4 h -annealed NCZ silicon, the 10(18) cm(-3) level Ge-codoping can remarkably increase the BMD density to better satisfy the requirement of internal gettering (IG) and also ensure the existence of a well-defined DZ. Finally, the mechanism underlying the effect of Ge-codoping on the formation of grown-in oxide precipitates in NCZ silicon has been tentatively elucidated.
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页数：8
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