Effect of the duty ratio on the indium tin oxide (ITO) film deposited by in-line pulsed DC magnetron sputtering method for resistive touch panel

被引：70

作者：

Ahn, Min Hyung ^{[1
]}

Cho, Eou-Sik ^{[1
]}

Kwon, Sang Jik ^{[1
]}

机构：

[1] Kyungwon Univ, Dept Elect Engn, Songnam 461701, Kyunggi Do, South Korea

来源：

APPLIED SURFACE SCIENCE | 2011年 / 258卷 / 03期

关键词：

Reverse time; Frequency; Pulsed DC sputtering; Indium tin oxide (ITO); Duty ratio; RAY PHOTOELECTRON-SPECTROSCOPY; THIN-FILMS; PRESSURE;

D O I：

10.1016/j.apsusc.2011.09.081

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The indium tin oxide (ITO) film was deposited on PET (polyethylene terephthalate) film using in-line pulsed DC magnetron sputtering system with different duty ratios. The reverse time and the frequency of pulsed DC power were changed to obtain the different duty ratios. From the electrical and optical properties such as the sheet resistance, resistivity, thickness and transmittance, the pulsed DC sputtered ITO/PET films were also superior to the DC sputtered ITO/PET films. The reverse time had little effect on the properties of the ITO/PET film and the frequency of pulsed DC power had an immerse effect on the properties of the ITO/PET films. The optimal ITO/PET film was obtained when the frequency was 200 kHz, the reverse time was 1 mu s, and the duty ratio was about 80%. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.

引用

页码：1242 / 1248

页数：7

共 50 条

[41] Effect of hydrogen partial pressure on optoelectronic properties of indium tin oxide thin films deposited by radio frequency magnetron sputtering method
Zhang, KR
Zhu, FR
Huan, CHA
Wee, ATS
JOURNAL OF APPLIED PHYSICS, 1999, 86 (02) : 974 - 980
[42] The Influence of Cross-Magnetron Effect on the Properties of Indium Tin Oxide Thin Films Deposited by Pulsed Dual Magnetron Discharges
Kleinhempel, Ronny
Graffel, Benjamin
Lukas, Jan
Kupfer, Hartmut
Dunger, Thoralf
Welzel, Thomas
Richter, Frank
PLASMA PROCESSES AND POLYMERS, 2007, 4 : S325 - S329
[43] Annealing effect on indium tin oxide thin films by DC magnetron sputtering for alkali vapor cell heating
Li, Jianhua
Jiang, Zhiyuan
Lin, Pingwei
Chen, Xinhua
Zhong, Lin
Zhang, Longfa
Wang, Xueshen
MODERN PHYSICS LETTERS B, 2019, 33 (16):
[44] Effects of film density on electrochromic tungsten oxide thin films deposited by reactive dc-pulsed magnetron sputtering
Sun, Xilian
Liu, Zhimin
Cao, Hongtao
JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 504 : S418 - S421
[45] Investigation of the effect of adding a moderate amount of hydrogen on the properties of tin oxide films deposited by DC magnetron sputtering
Velichko, Rostislav
Magari, Yusaku
Makino, Hisao
Furuta, Mamoru
JAPANESE JOURNAL OF APPLIED PHYSICS, 2021, 60 (05)
[46] Nano-indenter mechanical properties of ITO/glass thin film deposited by DC magnetron sputtering method at low temperature
Yoon, Han-Ki
Kim, Do Hyoung
Shin, Do Hoon
Murakami, Ri-Ichi
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2006, 20 (25-27): : 4322 - 4327
[47] Effect of the deposition geometry on the electrical properties within Tin-doped indium oxide film deposited under a given RF magnetron sputtering condition
You, DJ
Choi, SK
Han, HS
Lee, JS
Lim, CB
THIN SOLID FILMS, 2001, 401 (1-2) : 229 - 234
[48] High mobility titanium-doped indium oxide for use in tandem solar cells deposited via pulsed DC magnetron sputtering
Grew, B.
Bowers, J. W.
Lisco, F.
Arnou, N.
Walls, J. M.
Upadhyaya, H. M.
ADVANCED MATERIALS AND CHARACTERIZATION TECHNIQUES FOR SOLAR CELLS II, 2014, 60 : 148 - 155
[49] Influence of discharge power and annealing temperature on the properties of indium tin oxide thin films prepared by pulsed-DC magnetron sputtering
Huang, Mei
Hameiri, Ziv
Aberle, Armin G.
Mueller, Thomas
VACUUM, 2015, 121 : 187 - 193
[50] Effects of hydrogen gas on properties of tin-doped indium oxide films deposited by radio frequency magnetron sputtering method
Kim, Do-Geun
Lee, Sunghun
Lee, Gun-Hwan
Kwon, Sik-Chol
THIN SOLID FILMS, 2007, 515 (17) : 6949 - 6952

← 1 2 3 4 5 →