Growth defects in GaN films on 6H-SiC substrates

被引：68

作者：

Chien, FR ^{[1
]}

Ning, XJ ^{[1
]}

Stemmer, S ^{[1
]}

Pirouz, P ^{[1
]}

Bremser, MD ^{[1
]}

Davis, RF ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV, DEPT MAT SCI & ENGN, RALEIGH, NC 27695 USA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 19期

关键词：

D O I：

10.1063/1.116279

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lattice defects in GaN epilayers grown on 6H-SiC(0001) by metalorganic vapor phase epitaxy (MOVPE) have been characterized by transmission electron microscopy (TEM). The predominant defects in the film were threading dislocations and half-loops with Burgers vectors 1/3[11(2) over bar 0], [0001], and 1/3[11(2) over bar 3]. Planar faults were also observed in the film that are thought to be inversion domain boundaries (IDBs). (C) 1996 American Institute of Physics.

引用

页码：2678 / 2680

页数：3

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