Epitaxial diamond on Ir/SrTiO3/Si (001): From sequential material characterizations to fabrication of lateral Schottky diodes

被引：21
|
作者：
Arnault, J. C. [1 ]
Lee, K. H. [1 ]
Delchevalrie, J. [1 ]
Penuelas, J. [2 ]
Mehmel, L. [3 ]
Brinza, O. [3 ]
Temgoua, S. [4 ]
Stenger, I [4 ]
Letellier, J. [5 ]
Saint-Girons, G. [2 ]
Bachelet, R. [2 ]
Issaoui, R. [3 ]
Tallaire, A. [3 ]
Achard, J. [3 ]
Barjon, J. [4 ]
Eon, D. [5 ]
Ricolleau, C. [6 ]
Saada, S. [1 ]
机构：
[1] CEA, LIST, Diamond Sensors Lab, F-91191 Gif Sur Yvette, France
[2] Univ Lyon, Ecole Cent Lyon, INL, CNRS UMR 5270, F-69134 Ecully, France
[3] Univ Paris 13, Sorbonne Paris Cite, LSPM, CNRS, F-93430 Villetaneuse, France
[4] Univ Paris Saclay, GEMaC, CNRS, UVSQ, F-78000 Versailles, France
[5] Univ Grenoble Alpes, Inst Neel, Grenoble INP, CNRS, F-38000 Grenoble, France
[6] Univ Paris, CNRS, MPQ, UMR 7162, Batiment Condorcet, F-75013 Paris, France
来源：
DIAMOND AND RELATED MATERIALS | 2020年 / 105卷
关键词：
Iridium; Diamond Heteroepitaxy; Interfaces; Schottky diodes; HETEROEPITAXIAL DIAMOND; GROWTH; NUCLEATION; SRTIO3; MECHANISM; IRIDIUM;
D O I：
10.1016/j.diamond.2020.107768
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Advanced characterizations with combined analytical tools were carried out at the different stages of diamond heteroepitaxy on Ir/STO/Si (001) substrates. HRTEM and STEM-EELS revealed the presence of epitaxial nanometric diamond crystals after bias enhanced nucleation. UV Raman allowed estimating the diamond film quality and its strain at the early stages of heteroepitaxial growth. The crystalline structure and the strain within thick heteroepitaxial films were determined by XRD and CL investigations. A CL study of the cross-section provided the mapping of the dislocation network along the growth direction. Measurements performed on lateral Schottky diodes fabricated on a thick diamond film showed an excellent reproducibility on the substrate with a Schottky barrier height in good agreement with those obtained on homoepitaxial layers.
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页数：12
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