Resistance switching in HfO2-based OxRRAM devices

被引：7

作者：

Calka, P. ^{[1
]}

Martinez, E. ^{[1
]}

Lafond, D. ^{[1
]}

Dansas, H. ^{[1
]}

Tirano, S. ^{[2
]}

Jousseaume, V. ^{[1
]}

Bertin, F. ^{[1
]}

Guedj, C. ^{[1
]}

机构：

[1] CEA LETI, F-38054 Grenoble 9, France

[2] Univ Aix Marseille 1, Polytech Marseille, IM2NP, UMR CNRS 6242, F-13451 Marseille 20, France

来源：

MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 07期

关键词：

HfO2; TiN; Resistive switch; OxRRAM; TEM; AES; XPS;

D O I：

10.1016/j.mee.2011.03.125

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the origins of the resistivity change during the forming of HfO2 based resistive random access memories. The high and low resistive states of HfO2 were investigated using electrical measurements, TEM, XPS, and AES. TEM and XPS show that the HfO2/TiN interface is free from TiOxNy oxi-nitride states. Electrical measurements show that voltage threshold magnitude required for the formation of the conductive paths through the HfO2 layer depends on the polarity. The AES measurements show that HfO2 and HfOx or Hf metallic may coexist in the low resistive state. (c) 2011 Elsevier B.V. All rights reserved.

引用

页码：1140 / 1142

页数：3

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