Structure and physical properties of computer-simulated fullerene-based ultralow k dielectric materials

被引：0

作者：

Zagorodniy, K. ^{[1
]}

Hermann, H. ^{[1
]}

Taut, M. ^{[1
]}

Wang, Y. ^{[2
]}

Seifert, G. ^{[2
]}

Zschech, E. ^{[3
]}

机构：

[1] IFW Dresden, Leibniz Inst Solid State & Mat Res, POB 270116, D-01171 Dresden, Germany

[2] Tech Univ Dresden, Inst Phys Chem Elect, D-01062 Dresden, Germany

[3] AMD Saxony Ltd Liabil Comp & Co KG, Dresden, Germany

来源：

STRESS-INDUCED PHENOMENA IN METALLIZATION | 2007年 / 945卷

关键词：

ultralow-k dielectrics; interlayer dielectrics; molecular design; dielectric and mechanical properties; fullerene-based dielectrics; microelectronics;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

New insulating materials with low and ultralow dielectric constants and reasonable mechanical properties for future microelectronic applications are proposed. The material is designed as a network structure based on C-60 fullerenes interconnected by linker molecules. The theoretical treatment is difficult since interactions both on the atomic scale and on the structural level of 1 nm must be considered. Classical and quantum-theoretical methods are used to optimize the structures and to calculate dielectric and mechanical properties. The (static) dielectric constants, k, and elastic bulk moduli, B, of the proposed materials are in the range of k = 1.5 to 2.2 and B = 5 to 23 GPa, respectively.

引用

页码：162 / +

页数：2