Increasing the accuracy of diffractometric measurement of microrelief in integrated circuits

被引：0
|
作者：
Beklemishev, NN
Benevolenskii, SB
Istomina, IL
Kopylov, PV
机构：
来源：
MEASUREMENT TECHNIQUES | 1998年 / 41卷 / 03期
关键词：
Diffraction Maximum; Diffract Radiation; Circuit Topology; Semiconductor Chip; Topological Element;
D O I：
10.1007/BF02503884
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present a method for reducing error in diffractometric measurement of the dimensions of components of integrated circuits by reducing the systematic error introduced by the descriptive model of the object of measurement.
引用
收藏
页码：207 / 209
页数：3
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