Deep structural analysis of novel BGaN material layers grown by MOVPE

被引：33

作者：

Gautier, S. ^{[1
]}

Patriarche, G. ^{[2
]}

Moudakir, T. ^{[3
]}

Abid, M. ^{[4
]}

Orsal, G. ^{[1
]}

Pantzas, K. ^{[4
]}

Troadec, D. ^{[5
]}

Soltani, A. ^{[5
]}

Largeau, L. ^{[2
]}

Mauguin, O. ^{[2
]}

Ougazzaden, A. ^{[4
]}

机构：

[1] Univ Paul Verlaine de Metz, LMOPS, EA 4423, F-57070 Metz, France

[2] UPR, LPN CNRS, F-91450 Marcoussis, France

[3] Supelec, CNRS, UMI 2958GT, F-57070 Metz, France

[4] CNRS, Georgia Inst Technol GTL, UMI 2958GT, F-57070 Metz, France

[5] Univ Sci & Technol Lille, CNRS, IEMN, UMR 8520, F-59000 Lille, France

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 315卷 / 01期

关键词：

HAADF-STEM; MOVPE; BGaN; BORON; GAN;

D O I：

10.1016/j.jcrysgro.2010.08.042

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

BGaN ternary alloys with 0.7% and 1.7% boron grown on GaN/sapphire template substrates by metalorganic vapour phase epitaxy (MOVPE) have been investigated through HAADF-STEM. At low boron content, 0.7%, no compositional fluctuations were observed with XRD or STEM measurements. Photoluminescence at room temperature was measured. At higher boron content, cubic BGaN nano-sized clusters were identified. The clusters are 3 nm wide, homogeneously distributed in size and in density and coherent with the surrounding wurtzite BGaN matrix. Their boron composition was estimated by EDX. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：288 / 291

页数：4

共 50 条

[41] Improvement of MOVPE grown ZnTe:P layers by annealing treatment
Saito, K.
Fujimoto, K.
Yamaguchi, K.
Tanaka, T.
Nishio, M.
Guo, Q. X.
Ogawa, H.
PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2008, 100
[42] OPTICAL GAIN IN ZNTE/GAAS EPITAXIAL LAYERS GROWN BY MOVPE
MAJUMDER, FA
KALT, H
KLINGSHIRN, C
NAUMOV, A
STANZL, H
GEBHARDT, W
JOURNAL OF LUMINESCENCE, 1994, 60-1 : 12 - 15
[43] The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE
Sakharov, A., V
Lundin, W., V
Zavarin, E. E.
Usov, S. O.
Brunkov, P. N.
Tsatsulnikov, A. F.
TECHNICAL PHYSICS LETTERS, 2020, 46 (12) : 1211 - 1214
[44] Investigation of Boron Containing AlN and AlGaN Layers Grown by MOVPE
Rettig, Oliver
Scholz, Jan-Patrick
Steiger, Natja
Bauer, Sebastian
Hubacek, Tomas
Zikova, Marketa
Li, Yueliang
Qi, Haoyuan
Biskupek, Johannes
Kaiser, Ute
Thonke, Klaus
Scholz, Ferdinand
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2018, 255 (05):
[45] The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE
A. V. Sakharov
W. V. Lundin
E. E. Zavarin
S. O. Usov
P. N. Brunkov
A. F. Tsatsulnikov
Technical Physics Letters, 2020, 46 : 1211 - 1214
[46] Investigation of MOVPE-grown GaN layers doped with As atoms
Tsatsul'nikov, AF
Ber, BY
Kartashova, AP
Kudryavtsev, YA
Ledentsov, NN
Lundin, VV
Maksimov, MV
Sakharov, AV
Usikov, AS
Alfërov, ZI
Hoffmann, A
SEMICONDUCTORS, 1999, 33 (07) : 728 - 730
[47] Carrier profiles in Fe doped GaN layers grown by MOVPE
Azize, M
Bougrioua, Z
Girard, P
Gibart, P
Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2005, 2 (07): : 2153 - 2156
[48] Defect study of MOVPE-grown InGaP layers on GaAs
Knauer, A
Krispin, P
Balakrishnan, VR
Weyers, M
JOURNAL OF CRYSTAL GROWTH, 2004, 272 (1-4) : 627 - 632
[49] EXCITONS AND BIEXCITONS IN MOVPE-GROWN ZNS EPITAXIAL LAYERS
GUENNANI, D
VALENTA, J
MANAR, A
GRUN, JB
CLOITRE, T
BRIOT, O
AULOMBARD, RL
SOLID STATE COMMUNICATIONS, 1995, 96 (09) : 637 - 643
[50] Structural and optical properties of AlGaInN/GaN grown by MOVPE
Kobayashi, Y
Yamauchi, Y
Kobayashi, NK
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (4B): : 2300 - 2304

← 1 2 3 4 5 →