Deep structural analysis of novel BGaN material layers grown by MOVPE

被引：33

作者：

Gautier, S. ^{[1
]}

Patriarche, G. ^{[2
]}

Moudakir, T. ^{[3
]}

Abid, M. ^{[4
]}

Orsal, G. ^{[1
]}

Pantzas, K. ^{[4
]}

Troadec, D. ^{[5
]}

Soltani, A. ^{[5
]}

Largeau, L. ^{[2
]}

Mauguin, O. ^{[2
]}

Ougazzaden, A. ^{[4
]}

机构：

[1] Univ Paul Verlaine de Metz, LMOPS, EA 4423, F-57070 Metz, France

[2] UPR, LPN CNRS, F-91450 Marcoussis, France

[3] Supelec, CNRS, UMI 2958GT, F-57070 Metz, France

[4] CNRS, Georgia Inst Technol GTL, UMI 2958GT, F-57070 Metz, France

[5] Univ Sci & Technol Lille, CNRS, IEMN, UMR 8520, F-59000 Lille, France

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 315卷 / 01期

关键词：

HAADF-STEM; MOVPE; BGaN; BORON; GAN;

D O I：

10.1016/j.jcrysgro.2010.08.042

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

BGaN ternary alloys with 0.7% and 1.7% boron grown on GaN/sapphire template substrates by metalorganic vapour phase epitaxy (MOVPE) have been investigated through HAADF-STEM. At low boron content, 0.7%, no compositional fluctuations were observed with XRD or STEM measurements. Photoluminescence at room temperature was measured. At higher boron content, cubic BGaN nano-sized clusters were identified. The clusters are 3 nm wide, homogeneously distributed in size and in density and coherent with the surrounding wurtzite BGaN matrix. Their boron composition was estimated by EDX. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：288 / 291

页数：4

共 50 条

[1] Optical and structural properties of BGaN layers grown on different substrates
Kadys, A.
Mickevicius, J.
Malinauskas, T.
Jurkevicius, J.
Kolenda, M.
Stanionyte, S.
Dobrovolskas, D.
Tamulaitis, G.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2015, 48 (46)
[2] Structural investigation of MOVPE grown InGaAs buffer layers
Maigne, P
Coulas, D
JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) : 743 - 747
[3] Structural and spectroscopic properties of AlN layers grown by MOVPE
Thapa, S. B.
Kirchner, C.
Scholz, F.
Prinz, G. M.
Thonke, K.
Sauer, R.
Chuvilin, A.
Biskupek, J.
Kaiser, U.
Hofstetter, D.
JOURNAL OF CRYSTAL GROWTH, 2007, 298 (383-386) : 383 - 386
[4] Structural analysis of GaN layers on GaAs (111)B substrates grown by MOVPE
Sanorpim, S
Takuma, E
Wu, J
Onabe, K
Ichinose, H
Shiraki, Y
COMPOUND SEMICONDUCTORS 2001, 2002, (170): : 743 - 748
[5] Structural, electrical and optical characterization of InGaN layers grown by MOVPE
Yildiz, A.
Kemal, Oeztuerk M.
Bosi, M.
Ozcelik, S.
Kasap, M.
CHINESE PHYSICS B, 2009, 18 (09) : 4007 - 4012
[6] Structural,electrical and optical characterization of InGaN layers grown by MOVPE
Yildiz A
ztürk M Kemal
Bosi M
zelik S
Kasap M
Chinese Physics B, 2009, (09) : 4007 - 4012
[7] Change in Growth Mode of BGaN Layers Grown on GaN
Baranowski, Jacek M.
Kosciewicz, Kinga
Mozdzynska, Ewelina B.
Smalc-Koziorowska, Julita
CRYSTALS, 2024, 14 (06)
[8] Characterisation of GaAsN layers grown by MOVPE
Pelosi, C
Attolini, G
Bosi, M
Avella, M
Calicchio, M
Musayeva, N
Jimenez, J
JOURNAL OF CRYSTAL GROWTH, 2006, 287 (02) : 625 - 628
[9] Detailed deep trap analysis in Mg-doped p-type GaN layers grown by MOVPE
Witte, H
Krtschil, A
Lisker, M
Krost, A
Christen, J
Kuhn, B
Scholz, F
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 82 (1-3): : 85 - 87
[10] Analysis of ternary InGaN layers grown by atmospheric pressure vertical MOVPE
Yildiz, A.
Ozturk, M. K.
Kasap, M.
SIX INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION, 2007, 899 : 672 - 672

← 1 2 3 4 5 →