The case of using CMOS FD-SOI rather than CMOS bulk to harden ICs against laser attacks

被引：0

作者：

Dutertre, Jean-Max ^{[1
]}

Beroulle, Vincent ^{[5
]}

Candelier, Philippe ^{[3
]}

Faber, Louis-Barthelemy ^{[3
]}

Flottes, Marie-Lise ^{[4
]}

Gendrier, Philippe ^{[3
]}

Hely, David ^{[5
]}

Leveugle, Regis ^{[2
]}

Maistri, Paolo ^{[2
]}

Di Natale, Giorgio ^{[4
]}

Papadimitriou, Athanasios ^{[5
]}

Rouzeyre, Bruno ^{[4
]}

机构：

[1] Mines St Etienne, Ctr CMP, CEA Tech, F-13541 Gardanne, France

[2] Univ Grenoble Alpes, CNRS, Grenoble INP, TIMA, F-38000 Grenoble, France

[3] STMicroelectronics, 850 Rue Jean Monnet, F-38926 Crolles, France

[4] Univ Montpellier, CNRS, LIRMM, 161 Rue Ada, F-34095 Montpellier, France

[5] Univ Grenoble Alpes, Grenoble INP, LCIS, F-26000 Valence, France

来源：

2018 IEEE 24TH INTERNATIONAL SYMPOSIUM ON ON-LINE TESTING AND ROBUST SYSTEM DESIGN (IOLTS 2018) | 2018年

关键词：

Laser fault injection; FD-SOI; CMOS bulk; GATE;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

At first used to emulate the effects of radioactive ionizing particules passing through integrated circuits (ICs), laser illumination is also used to inject faults into the computations of secure ICs for the purpose of retrieving secret data. The CMOS FD-SOI technology is expected to be less sensitive to laser faults injection than the more usual CMOS bulk technology. We report in this work an experimental assessment of the interest of using FD-SOI rather than CMOS bulk to decrease laser sensitivity. Our experiments were conducted on test chips at the 28 nm node for both technologies with laser pulse durations in the picosecond and nanosecond ranges.

引用

页码：214 / 219

页数：6